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In the manufacture of semiconductor devices, a number of steps are commonly performed on a semiconductor substrate assembly including a semiconductor wafer having one or more semiconductor devices thereon. Each step may be performed in a processing chamber designed for the specific step being performed, or the steps may be performed in more than one chamber.
In some fabrication processes, it is advantageous to integrate a metal silicide (MS) step with one or more other steps. For example, it is known to form a thin layer of, for example, nickel silicide over a polysilicon gate, or a polysilicon contact, which helps lower the sheet resistance for the gate or contact. Although this process is standard, the size of each chip is limited by the size of the processing chamber. If the wafer is large enough to accommodate a wider chamber, the processing chamber typically would be enormous.Vitamin D supplementation for low-risk patients with calcium oxalate urolithiasis: a 2-year randomized placebo-controlled trial.
Despite the increasing number of studies on vitamin D (VD) supplementation in patients with calcium oxalate (CaOx) urolithiasis, the evidence is still controversial. Therefore, we undertook this randomized, double-blind, placebo-controlled trial to investigate the efficacy of VD supplementation in preventing recurrence of CaOx urolithiasis. This study involved patients without any predisposing factors of CaOx urolithiasis. They received either active (1,000 IU/day) or placebo (maltodextrine) VD for 2 years. Ser
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