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.1. Field of the Invention
This invention relates to a method of fabricating a semiconductor device such as a metal-oxide-semiconductor field effect transistor (MOSFET), a metal-semiconductor field effect transistor (MESFET), a high electron mobility transistor (HEMT) or a heterostructure integrated circuit device.
2. Description of the Related Art
GaN (gallium nitride) with high electron mobility, high breakdown electric field and high thermal conductivity is widely used as an electron carrier material in a high-power semiconductor device.
U.S. Pat. No. 5,843,836 (published on 1998) discloses a MOSFET utilizing GaN. In a production process of the MOSFET, epitaxial growth of GaN on a sapphire substrate is first carried out. Subsequently, the grown GaN layer is patterned and an AlInGaN electron carrier layer is grown on the GaN layer. Subsequently, a gate electrode is formed on the electron carrier layer and two gate electrodes formed on the
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